Back جايانت باليجا Arabic جايانت باليجا ARZ বি. জয়ন্ত বালিগা Bengali/Bangla B. Jayant Baliga German بی جایانت بالیگا Persian Jayant Baliga Portuguese Балига, Джайянт Russian Jayant Baliga Swedish B·賈揚特·巴利加 Chinese
B. Jayant Baliga | |
|---|---|
 | |
| Alma mater | Indian Institute of Technology, Madras |
| Awards | Global Energy Prize |
Bantval Jayant Baliga (born 28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).[1][2]
In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology, and in 2024, won the Finnish Millennium Technology Prize for his invention of the IGBT.[3][4]
- ^ Edwards, John (22 November 2010). "B. Jayant Baliga: Designing The Insulated-Gate Bipolar Transistor". Electronic Design. Retrieved 16 January 2017.
- ^ "NIHF Inductee Bantval Jayant Baliga Invented IGBT Technology". National Inventors Hall of Fame. Retrieved 17 August 2019.
- ^ "Revolutionizing global electrification Bantval Jayant Baliga". Millennium Technology Prize. Retrieved 17 September 2024.
technological innovations for a better life. The winning innovations are globally accessible and are based upon ethically sound academic and scientific research.
- ^ Chowdhury, Hasan (5 September 2024). "Meet the professor who just won the Millennium Technology Prize — and $1.1 million". Business Insider. Retrieved 21 September 2024.