Herbert Kroemer

Herbert Kroemer
Kroemer in 2008
Born	(1928-08-25)August 25, 1928 Weimar, Thuringia, Germany
Died	March 8, 2024(2024-03-08) (aged 95)
Nationality	Germany United States (from 2003)[2]
Alma mater	University of Jena University of Göttingen
Known for	Drift-field transistor Double-heterostructure laser Heterojunction bipolar transistor
Awards	J J Ebers Award (1973) Humboldt Research Award (1994) Nobel Prize in Physics (2000) IEEE Medal of Honor[1](2002)
Scientific career
Fields	Electrical Engineering, Applied Physics
Institutions	Fernmeldetechnisches Zentralamt RCA Laboratories Varian Associates University of Colorado University of California, Santa Barbara
Thesis	Zur Theorie des Germaniumgleichrichters und des Transistors : Ausz. Mit 10 Fig. im Text (1953)
Doctoral advisor	Fritz Sauter

Herbert Kroemer (German: [ˈhɛʁbɛʁt ˈkʁøːmɐ] ^ⓘ; August 25, 1928 – March 8, 2024) was a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics". Kroemer was professor emeritus of electrical and computer engineering at the University of California, Santa Barbara, having received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor.^[3] His research into transistors was a stepping stone to the later development of mobile phone technologies.