William Shockley

William Shockley
Born	William Bradford Shockley Jr. (1910-02-13)February 13, 1910 London, England, UK
Died	August 12, 1989(1989-08-12) (aged 79) Stanford, California, US
Nationality	American
Alma mater	Caltech (BS, 1932) MIT (PhD, 1936)
Known for	Point-contact transistor and GJT Diffused-base transistor Heterojunction bipolar transistor Thyristor BARITT diode Shockley diode Junction theory BJT theory FET theory Deathnium Deep-level trap Deformation potential theory Empty lattice approximation Gradual channel approximation Lucky electron model Hot electron theory Channel length modulation Process variation Ion implantation Low-level injection Through-silicon via Transmission line measurement Shockley diode equation Shockley–Read–Hall recombination Shockley partials Shockley–Ramo theorem Shockley states Shockley–James paradox Shockley–Queisser limit Haynes–Shockley experiment Read–Shockley equation Van Roosbroeck– Shockley equation
Awards	Nobel Prize in Physics (1956) Comstock Prize in Physics (1953) Oliver E. Buckley Condensed Matter Prize (1953) Wilhelm Exner Medal (1963) IEEE Medal of Honor (1980)
Scientific career
Institutions	Bell Labs Shockley Semiconductor Stanford University Columbia University
Doctoral advisor	John C. Slater

William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American physicist and inventor. He was the manager of a research group at Bell Labs. He won the 1956 Nobel Prize in Physics.